Electron bunching in a two cavity Klystron Amplifier
The program is written in C++ and uses the Mesa graphics library.
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Following 4 screenshots show the process of bunching in a two cavity
klystron Amplifier
The white coloured vertical line to the left of each
screenshot is the buncher cavity, and a similar line towards the right in each
screenshot is the catcher cavity. A small horizontal line over the virtical
buncher cavity line shows the direction to the instantaneous RF field applied
at the buncher cavity. The length of the horizontal line shows the strength of
the electric field. The white dots, representing electrons, are generated
randomly and pop onto the screen from the left side. As they move towards the
right through the buncher cavity, their velocity is changed due to the RF field
applied to buncher cavity. This change in the velocity of electrons causes
"velocity modulation" which in turn causes bunching of the electrons as they
travel towards the catcher cavity.
| Fig 1.1 | Here the electric field is directed towards the right. So the electrons entering from the left side get retarded. |
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| Fig 1.2 | The electric field is now directed towards the left, thus accelerating the electrons coming from the left. These accelerated electrons are going to bump onto the previously slow moving retarded electrons. Such bunching can be seen taking place in the middle of the Klystron. |
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| Fig 1.3 | A big bunch of electrons thus formed can be seen moving towards the catcher cavity. |
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| Fig 1.4 | The electron bunch passes through the catcher cavity inducing sinusoidal oscillations whose magnitude will depend on the amount of bunching that has taken place. These sinusoidal oscillations induced are conceptually similar to those that are induced in a class C amplifier. |
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- Requirements:
- GNU/Linux system with Mesa Library installed.
- Licence:
- GNU General Public License
Download the program binary
Download the program source code